MoSys' 1T-SRAM-R Technology Verified On SMIC 0.13-Micron Logic Process

July 28, 2004 | Print | Email Email | Comments | Category: Gadgets & Electronics



    MoSys, Inc., the provider of high density embedded memory solutions, and Semiconductor Manufacturing International Corporation, China's open-IC foundry, announced that MoSys' 1T-SRAM-R technology incorporating Transparent Error Correction (TEC) is silicon-proven in SMIC's 0.13 micron logic process.

    This extends the existing cooperation between the companies as an additional optimized high-density memory solution available to SMIC's foundry customers.

    As a foundry, SMIC provides integrated circuit (IC) manufacturing at 0.35-micron to 0.13-micron technologies. Established in April 2000, SMIC, a Cayman Islands company, operates three 8-inch wafer fabrication facilities in the Zhangjiang High-Tech Park in Shanghai, and an 8-inch wafer fabrication facility in Tianjin. In addition, SMIC is currently constructing 12-inch wafer fabrication facilities in Beijing.

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