Taiwan Semiconductor introduces the new 40V PerFET (NH Series) power MOSFETs with a PDFN33 package. The new MOSFETs are built on proprietary device structures and processes that enable exceptionally low on-state resistance and switching figure-of-merit (FOM – R*Q). The achievement of 35% FOM reduction, compared to previous technology (NB Series), puts this portfolio at the top of performance. The value of RDS(on) at temperatures (-55° to 150° C) presents less variation due to a lower temperature coefficient (K). This initial 40V N-channel platform includes options for standard (10V) and logic level (5V) gate-drive requirements while preserving rugged safe-operating resistance to...