Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts speed and cuts energy use in breakthrough Chinese transistor design China may have just leapfrogged US chip tech with this silicon-free transistor innovation Chinese researchers at Peking University have announced what seems like a breakthrough in transistor design, which if commercialized, could dramatically shift the direction of microprocessor development. The team created a silicon-free transistor based on a two-dimensional material, bismuth oxyselenide. The innovation hinges on the gate-all-around (GAAFET) architecture, where the transistor’s gate wraps completely around the source. Traditional FinFET designs, which dominate…